The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
May. 31, 2002
Shin Yokoyama, Higashi-Hiroshima, JP;
Anri Nakajima, Higashi-Hiroshima, JP;
Yoshihide Tada, Nirasaki, JP;
Genji Nakamura, Nirasaki, JP;
Masayuki Imai, Annaka, JP;
Tsukasa Yonekawa, Nirasaki, JP;
Shin Yokoyama, Higashi-Hiroshima, JP;
Anri Nakajima, Higashi-Hiroshima, JP;
Yoshihide Tada, Nirasaki, JP;
Genji Nakamura, Nirasaki, JP;
Masayuki Imai, Annaka, JP;
Tsukasa Yonekawa, Nirasaki, JP;
Tokyo Electron Limited, , JP;
Abstract
A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.