The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Jun. 07, 2001
Izuo Iida, Tochigi, JP;
Izuo Iida, Tochigi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A non-volatile memory cell and a high voltage MOS transistor on the same semiconductor chip without changing the characteristic of the non-volatile memory cell. A gate insulating film of a MOS transistor is formed using the steps of forming an oxide filmformed on a floating gateof a split-gate type non-volatile memory cell and of forming a tunneling insulating filmformed on the floating gateand the oxide film. The gate insulating filmof the MOS transistor is formed by a stacked layer of the oxide filmand tunneling insulating film. Thus, the quantity of heat treatment in the entire production process undergoes no change, and the optimized characteristic of the non-volatile memory undergoes no change.
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