The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Mar. 11, 2003
Jong-rak Park, Cheongju, KR;
Jong-Rak Park, Cheongju, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of designing a phase grating pattern and a method of manufacturing a photo mask using the design method are aimed at enhancing the resolution of a photolithographic process. A modified form of illumination, which will irradiate a main mask pattern to be transcribed onto a wafer using the photolithographic process and thereby enhance the transcription process, is selected. An area over which patterns for providing the modified form of illumination is divided into a plurality of subcells. Phase values are arbitrarily assigned and a phase values to the subcells. One of the subcells is randomly selected, and a phase value is assigned to the randomly selected subcell. These steps are repeated producing new arrangements of the phase values assigned to the subcells. The arrangements of the phase values are evaluated to determine whether any of them correspond to the selected modified illumination. When such a correspondence is realized, a phase grating pattern made according to the arrangement of phase values is produced as part of an auxiliary mask or as part of the main mask.