The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Dec. 03, 2001
Applicants:
Tsutomu Nishihashi, Chigasaki, JP;
Junki Fujiyama, Chigasaki, JP;
Yuzo Sakurada, Chigasaki, JP;
Inventors:
Assignee:
Ulvac, Inc., Kanagawa-Ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J037/08 ; G21G005/00 ;
U.S. Cl.
CPC ...
Abstract
In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.