The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Apr. 16, 2003
Applicants:
Yoshihiko Kanzawa, Osaka, JP;
Katsuya Nozawa, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Minoru Kubo, Mie, JP;
Inventors:
Yoshihiko Kanzawa, Osaka, JP;
Katsuya Nozawa, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Minoru Kubo, Mie, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L020/30 ; H01L021/36 ; H01L029/06 ; H01L029/12 ;
U.S. Cl.
CPC ...
Abstract
A Si substratewith a SiGeC crystal layerdeposited thereon is annealed to form an annealed SiGeC crystal layeron the Si substrate. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer, which is lattice-relieved and hardly has dislocations, and SiC microcrystalsdispersed in the matrix SiGeC crystal layer. A Si crystal layer is then deposited on the annealed SiGeC crystal layer, to form a strained Si crystal layerhardly having dislocations.