The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Apr. 29, 2004
Chien-hung Chen, Hsin-Chu, TW;
Chungchin Shih, Hsin-Chu County, TW;
Chien-Hung Chen, Hsin-Chu, TW;
Chungchin Shih, Hsin-Chu County, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for programming a single-poly EPROM cell at relatively low operation voltages (±Vcc) is disclosed. According to this invention, the single-poly EPROM cell includes a P-channel floating-gate transistor formed on an N well of a P type substrate, and an N-channel coupling device. The P-channel floating-gate transistor has a Pdoped drain, Pdoped source, a P channel defined between the Pdoped drain and Pdoped source, a tunnel oxide layer on the P channel, and a floating doped poly gate disposed on the tunnel oxide layer. The N-channel coupling device includes a floating poly electrode, which is electrically connected to the floating doped poly gate of the P-channel floating-gate transistor, and is capacitively coupled to a control region doped in the P type substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile