The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2005

Filed:

Feb. 20, 2003
Applicants:

Yuan-hsun Wu, Jungli, TW;

Teng-yen Huang, Taipei, TW;

Wen-bin Wu, Taoyuan Hsien, TW;

Yi-nan Chen, Taipei, TW;

Inventors:

Yuan-Hsun Wu, Jungli, TW;

Teng-Yen Huang, Taipei, TW;

Wen-Bin Wu, Taoyuan Hsien, TW;

Yi-Nan Chen, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F007/36 ;
U.S. Cl.
CPC ...
Abstract

A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiON, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.


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