The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Oct. 22, 2003
Applicants:
Eun-ae Chung, Kyungki-do, KR;
Doo-sup Hwang, Kyungki-do, KR;
Cha-young Yoo, Kyungki-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/00 ; H01L021/44 ;
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is pretreated at a first temperature so that an upper surface of the metal layer is changed into a mixed phase of metal and oxygen and becomes substantially resistant to further oxidation during a subsequent heating at a higher temperature in an oxygen atmosphere.
Chung, Eun-ae. (2005). Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed (U.S. Patent No. 6927166). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6927166
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile