The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
May. 06, 2003
Werner Graf, Dresden, DE;
Ulrike Bewersdorff-sarlette, Radebeul, DE;
Werner Graf, Dresden, DE;
Ulrike Bewersdorff-Sarlette, Radebeul, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A gate structure of a transistor is fabricated with an additional barrier formed on a metal layer of the gate structure before the deposition of a silicon oxide layer. Applying this barrier layer on the metal layer before the deposition of the silicon oxide layer prevents an oxidation of the metal during the deposition of the silicon oxide layer. A lowering of the conductivity of the metal layer or a loss of metal through sublimating metal oxide is thereby prevented. As a result, in particular the performance of the gate structure or of the transistor is improved further. In addition, disturbing coupling effects in the circuit are significantly reduced by the use of the silicon oxide cap.