The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Jul. 09, 2003
Jian-gang Weng, Corvallis, OR (US);
Ravi Prasad, Corvallis, OR (US);
Cary G Addington, Albany, OR (US);
Man Ho Cheung, Singapore, SG;
Jian-gang Weng, Corvallis, OR (US);
Ravi Prasad, Corvallis, OR (US);
Cary G Addington, Albany, OR (US);
Man Ho Cheung, Singapore, SG;
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.