The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Mar. 08, 2002
Jaynal A. Molla, Gilbert, AZ (US);
John D'urso, Chandler, AZ (US);
Kelly Kyler, Mesa, AZ (US);
Bradley N. Engel, Chandler, AZ (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Jaynal A. Molla, Gilbert, AZ (US);
John D'Urso, Chandler, AZ (US);
Kelly Kyler, Mesa, AZ (US);
Bradley N. Engel, Chandler, AZ (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.