The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Oct. 10, 2000
Franz Laermer, Weil der Stadt, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Franz Laermer, Weil der Stadt, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method is proposed for etching patterns in an etching body (), in particular cut-outs in a silicon body () exactly defined in a lateral manner, using a plasma (). In this context, a high-frequency-pulsed high-frequency power is at least temporarily coupled into the etching body () via an at least temporarily applied high-frequency a.c. voltage. This coupled, high-frequency-pulsed high-frequency power is further modulated at a low frequency, in particular clocked. The proposed method opens a wide process window for varying the etching parameters in the implemented plasma etching process, and is especially suitable for etching patterns in silicon using high mask selectivity and high etching rates for simultaneously minimized charge effects, in particular with respect to notching on the dielectric boundary surface.