The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
May. 19, 2004
Christopher W. Hill, Boise, ID (US);
Christopher W. Hill, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A storage capacitor plate for a semiconductor assembly having a substantially continuous porous conductive storage plate comprising silicon nanocrystals residing along a surface of a conductive material and along a surface of a coplanar insulative material adjacent the conductive material, a capacitor cell dielectric overlying the silicon nanocrystals and an overlying conductive top plate. The conductive storage plate is formed by a semiconductor fabrication method comprising forming silicon nanocrystals on a surface of a conductive material and on a surface of an insulative material adjacent the conductive material, wherein silicon nanocrystals contain conductive impurities and are adjoined to form a substantially continuous porous conductive layer.