The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Dec. 19, 2001
Applicants:
Masatoshi Fukuda, Kawasaki, JP;
Kouji Tsunoda, Kawasaki, JP;
Inventors:
Masatoshi Fukuda, Kawasaki, JP;
Kouji Tsunoda, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/92 ;
U.S. Cl.
CPC ...
Abstract
The semiconductor device comprises a capacitor including a storage electrode, a capacitor dielectric film formed on the storage electrode, and a plate electrode formed on the capacitor dielectric film, the storage electrodehaving an upper end rounded and having a larger thickness at the upper end than a thickness in the rest region. Whereby electric field concentration on the upper end of the storage electrode can be mitigated, and leakage current increase and dielectric breakdown of the capacitor dielectric film can be precluded.