The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Jan. 21, 2004
Applicants:
Osamu Arisumi, Tokyo, JP;
Keitaro Imai, Tokyo, JP;
Koji Yamakawa, Tokyo, JP;
Bum-ki Moon, Tokyo, JP;
Inventors:
Osamu Arisumi, Tokyo, JP;
Keitaro Imai, Tokyo, JP;
Koji Yamakawa, Tokyo, JP;
Bum-ki Moon, Tokyo, JP;
Assignees:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L031/119 ; H01L029/00 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.