The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
May. 02, 2003
Hiroshi Itokawa, Yokohama, JP;
Koji Yamakawa, Tokyo, JP;
Keitaro Imai, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Bum-ki Moon, Tokyo, JP;
Hiroshi Itokawa, Yokohama, JP;
Koji Yamakawa, Tokyo, JP;
Keitaro Imai, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Bum-ki Moon, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Infineon Technologies, AG, Munich, DE;
Abstract
There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and comprising a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, at least one of the bottom electrode and the top electrode comprising a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, represented by ABO, and containing a first metal element as a B site element, and a metal film provided between the conductive film and the metal oxide film, and containing a second metal element which is a B site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy at a time when the second metal element forms an oxide being larger than that at a time when the first metal element forms an oxide.