The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Dec. 23, 2003
Toshihiko Iinuma, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Mitsuaki Izuha, Yokohama, JP;
Kiyotaka Miyano, Fujisawa, JP;
Kyoichi Suguro, Yokohama, JP;
Toshihiko Iinuma, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Mitsuaki Izuha, Yokohama, JP;
Kiyotaka Miyano, Fujisawa, JP;
Kyoichi Suguro, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
There is disclosed is a semiconductor device which comprises a semiconductor substrate, isolation regions formed within the semiconductor substrate to define the active region, a pair of impurity diffusion regions formed within the element region in a manner to have surfaces elevated from the isolation region, a SiGe film formed on an upper surface of the impurity diffusion region so as to cover partly the side surface of the impurity diffusion region, a Ge concentration in the SiGe film being higher at a lower surface of the SiGe film than at an upper surface of the SiGe film, a metal silicide layer formed on the SiGe film, and a gate electrode formed in the active region of the semiconductor substrate with a gate insulating film interposed therebetween and having a sidewall insulating film formed on the side surface.