The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2005

Filed:

Feb. 14, 2002
Applicants:

Takeshi Sakuma, Tsukui-gun, JP;

Hirokatsu Kobayashi, Nirasaki, JP;

Inventors:

Takeshi Sakuma, Tsukui-gun, JP;

Hirokatsu Kobayashi, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/44 ;
U.S. Cl.
CPC ...
Abstract

Process operations are performed for subjecting target substrates respectively to a semiconductor process, while a target substrate is placed on a worktable within a process chamber, and the worktable is heated by a temperature control member to heat the target substrate. The reflection coefficient within the process chamber is changed depending on deposition of a by-product, which is generated during the semiconductor process on the target substrate, within the process chamber. A parameter representing the reflection coefficient within the process chamber is measured, between the first and last ones of the process operations. The set temperature of the worktable used in the semiconductor process is adjusted, based on measured value of the parameter, during process operations performed after measuring the parameter. As a consequence, repeatability of the semiconductor process is improved.


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