The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Aug. 22, 2002
Geun Su Lee, Kyoungki-do, KR;
Jae Chang Jung, Kyoungki-do, KR;
Ki Soo Shin, Seoul, KR;
SE Jin Choi, Seoul, KR;
Deog Bae Kim, Seoul, KR;
Jae Hyun Kim, Seoul, KR;
Geun Su Lee, Kyoungki-do, KR;
Jae Chang Jung, Kyoungki-do, KR;
Ki Soo Shin, Seoul, KR;
Se Jin Choi, Seoul, KR;
Deog Bae Kim, Seoul, KR;
Jae Hyun Kim, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Dongjin Semichem Co., Ltd., Inchon-Shi, KR;
Abstract
Photoresist monomers, polymers thereof, photoresist compositions containing the same for preventing acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area. The line edge roughness and slope pattern are improved when an ultrafine photoresist pattern is formed using photoresist copolymer having a multi-oxygen-containing compound as a repeating unit such as an ethyleneoxy moiety represented by Formula 1 with at least one polymerizable carbon-carbon double bond. In addition, the shape of pattern is improved by eliminating top loss and the adhesion of pattern to the substrate is improved.