The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Jan. 15, 2003
Ching-yueh Chen, Hsin Chu, TW;
Ching-Yueh Chen, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for repairing an attenuated phase shift mask providing an attenuated phase shift mask comprising an etched opening and at least one underlying light attenuating layer to reveal a quartz substrate the opening including an unetched portion comprising the at least one light attenuating layer; blanket depositing a negative photoresist layer over the at least one light blocking layer to include filling at a portion of the opening; exposing the negative photoresist layer through the quartz substrate and developing the negative photoresist layer to form a negative photoresist layer portion filling a portion of the opening; and carrying out a dry etching process to remove the unetched portion.