The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2005

Filed:

May. 28, 2002
Applicants:

Hiroyuki Takahashi, Kanagawa, JP;

Atsushi Nakagawa, Kanagawa, JP;

Hideo Inaba, Kanagawa, JP;

Inventors:

Hiroyuki Takahashi, Kanagawa, JP;

Atsushi Nakagawa, Kanagawa, JP;

Hideo Inaba, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C019/08 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device is provided which effectively reduces a consumption of current of a system of circuits associated with refresh operations. A control signal circuitcontrols n-channel transistorsC,B to be in an OFF-state based on an internal chip select signal SCI in an interval time period between the refresh operations, wherein the n-channel transistorsC,B are connected between the system of circuits associated with refresh operations (an internal voltage-down circuitand a boost circuit) and the ground, so as to break down a leak path of the system of circuits associated with refresh operations for reducing the leakage of current. At a timing of starting the refresh operation by triggering a timer, the internal chip select signal SCI is transitioned to a high level for supplying a ground voltage to the internal voltage-down circuitand the boost circuit


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