The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Apr. 23, 2004
Applicants:
Zoran Krivokapic, Santa Clara, CA (US);
Judy Xilin an, San Jose, CA (US);
Srikanteswara Dakshina-murthy, Austin, TX (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Inventors:
Zoran Krivokapic, Santa Clara, CA (US);
Judy Xilin An, San Jose, CA (US);
Srikanteswara Dakshina-Murthy, Austin, TX (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/06 ;
U.S. Cl.
CPC ...
Abstract
A narrow channel FinFET is described herein with a narrow channel width. A protective layer may be formed over the narrow channel, the protective layer being wider than the narrow channel.
Krivokapic, Zoran. (2005). Narrow fin finfet (U.S. Patent No. 6921963). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6921963
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile