The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Dec. 31, 2002
Applicants:
Jun Zeng, Torrance, CA (US);
Ming-jiang Zhou, Torrance, CA (US);
Tzong-shiann Wu, Torrance, CA (US);
Inventors:
Jun Zeng, Torrance, CA (US);
Ming-Jiang Zhou, Torrance, CA (US);
Tzong-Shiann Wu, Torrance, CA (US);
Assignees:
Pyramis Corporation, Torrance, CA (US);
Delta Electronics, Inc., , TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/72 ;
U.S. Cl.
CPC ...
Abstract
A new low forward voltage drop Schottky barrier diode and its manufacturing method are provided. The method includes steps of providing a substrate, forming plural trenches on the substrate, and forming a metal layer on the substrate having plural trenches thereon to form a barrier metal layer between the substrate and the surface metal layer for forming the Schottky barrier diode.