The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Mar. 11, 2003
Kang-lie Chiang, San Jose, CA (US);
Mahmoud Dahimene, Sunnyvale, CA (US);
Xiaoye Zhao, Mountain View, CA (US);
Yan YE, Saratoga, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Hoiman Hung, Cupertino, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Giuseppina R. Conti, Oakland, CA (US);
Kang-Lie Chiang, San Jose, CA (US);
Mahmoud Dahimene, Sunnyvale, CA (US);
Xiaoye Zhao, Mountain View, CA (US);
Yan Ye, Saratoga, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Hoiman Hung, Cupertino, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Giuseppina R. Conti, Oakland, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of treating a dielectric layer having a low dielectric constant, where the dielectric layer has been processed in a manner that causes a change in the dielectric constant of an affected region of the layer. The treatment of the affected region may comprise etching, sputtering, annealing, or combinations thereof. The treatment returns the dielectric constant of the dielectric layer to substantially the dielectric constant that existed before processing.