The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Oct. 21, 2002
Yao-chi Chang, Tainan, TW;
Jeff LU, Tainan, TW;
Yao-Chi Chang, Tainan, TW;
Jeff Lu, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for dry etching a feature to control an etching depth using endpoint detection and a sacrificial hardmask including providing a substrate for etching a feature opening into said substrate, said substrate provided with at least a first dielectric layer overlying the substrate; providing at least a second dielectric layer including a sacrificial hardmask at a predetermined thickness over the at least a first dielectric layer; photolithographically patterning and etching in a first dry etching process through a thickness of the at least a second dielectric layer and the at least a first dielectric layer to expose the substrate for dry etching the feature opening; and, dry etching in a second dry etching process the substrate and the sacrificial hardmask layer to endpoint detection of an underlying layer with respect to the sacrificial hardmask layer to thereby etch through a predetermined thickness of the substrate.