The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Sep. 25, 2002
Josef Mathuni, Munich, DE;
Gunther Ruhl, Dorfen, DE;
Josef Mathuni, Munich, DE;
Gunther Ruhl, Dorfen, DE;
Infineon Technologies AG, München, DE;
Abstract
The present invention provides a production method for a halftone phase mask which has an SiOsubstrate, an overlying refractory metal SiNphase shifter layer () and an overlying chromium oxide or chromium mask layer (), having the following steps: provision of a mask () on the chromium oxide or chromium mask layer (); etching of the chromium oxide or chromium mask layer () for the purpose of forming a hard mask from the chromium oxide or chromium mask layer () in a first etching step; selective etching of the refractory metal SiNphase shifter layer () using the hard mask in a plasma with a chlorine-containing and/or hydrogen-chloride-containing main gas in a second etching step with a predetermined cathode power of at least 20 W.