The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Jun. 20, 2003
Applicant:
Ching-hua Chen, Hsinchu, TW;
Inventor:
Ching-hua Chen, Hsinchu, TW;
Assignee:
Powerchip Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C016/34 ;
U.S. Cl.
CPC ...
Abstract
A method of stabilizing the properties of a material layer is disclosed. A plurality of wafers are stored in a FOUP and in sequence the wafers are transferred to a chamber to proceed with deposition of a material layer and to the FOUP filled with a specific gas after deposition until all the wafers in the FOUP are treated. In the process of deposition, the wafers deposited with material layers on their surfaces are stored in the FOUP filled with specific gas. Therefore, the surface properties of all the wafers in the FOUP are stablilized and contamination due to outgassing is prevented.