The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Nov. 12, 2003
Sudhakar Balijepalli, Midland, MI (US);
Dale J. Aldrich, Lake Jackson, TX (US);
Laura A. Grier, Brazoria, TX (US);
Michael E. Mills, Midland, MI (US);
Sudhakar Balijepalli, Midland, MI (US);
Dale J. Aldrich, Lake Jackson, TX (US);
Laura A. Grier, Brazoria, TX (US);
Michael E. Mills, Midland, MI (US);
Dow Global Technologies, Inc., Midland, MI (US);
Abstract
Provided are materials and methods for the chemical mechanical planarization of material layers using a down force of less than about 2.5 psi while maintaining a material removal rate generally similar to that obtained using higher down forces while simultaneously improving the selectivity of the process with respect to a primary material formed over a barrier material. The materials and methods disclosed herein are suitable for use in meatallization operations during semiconductor device fabrication, in particular in processes in which the primary material is a softer metal such as copper and the barrier material is a harder material such as a metal nitride.