The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6917554 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 12, 2005

Filed:

Jul. 24, 2003
Applicant:

Ravi P. Annavajjhala, Folsom, CA (US);

Inventor:

Ravi P. Annavajjhala, Folsom, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C007/00 ; H02H003/22 ;
U.S. Cl.
CPC ...
Abstract

A protection circuit that permits the use of thin oxide transistor devices. In one embodiment, the circuit is used to protect internal nodes of a flash EEPROM chip from a power pad voltage. A thin oxide device can be used to directly couple the power pad to an internal node of the flash chip. Optionally, thin oxide devices can also be used to set the steady state internal node voltage and a current source can be coupled to the node to bleed sub-threshold current. In yet another embodiment, a pull down circuit is coupled to the node to pull the node immediately down to a desired steady state voltage when the EEPROM algorithm is completed.


Find Patent Forward Citations

Annavajjhala, Ravi. (2005). Protection circuit (U.S. Patent No. 6917554). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6917554

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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