The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Mar. 02, 2004
James W. Tschanz, Portland, OR (US);
Mircea R. Stan, Charlottesville, VA (US);
Siva G. Narendra, Portland, OR (US);
Vivek K. DE, Beaverton, OR (US);
James W. Tschanz, Portland, OR (US);
Mircea R. Stan, Charlottesville, VA (US);
Siva G. Narendra, Portland, OR (US);
Vivek K. De, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments circuits provide a transistor body bias voltage so that the ratio of Ito Iis constant over a range of temperature, where Iis a transistor current when ON and Iis a (leakage) transistor current when OFF. In one embodiment, a nFET is biased to provide Ito a current mirror that sources a current AIto a node, a nFET is biased to provide Ito a current mirror that sinks a current BIfrom the node, and an amplifier provides feedback from the node to the body terminals of the nFETs so that at steady state AI=BI, where A and B are constants independent over a range of temperature. In this way, the ratio I/Iis maintained at B/A for some range of temperatures. Other embodiments are described and claimed.