The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Jul. 03, 2003
Applicants:
Ying-lin Chen, Taichung, TW;
Chiang-lang Yen, Taichung, TW;
Ling-sung Wang, Hsin-Chu, TW;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A method is provided for the removal of liner oxide from the surface of a gate electrode during the creation of the gate electrode. A layer of gate oxide is formed over the surface of a substrate, a layer of gate electrode is deposited over the layer of gate oxide. The gate electrode is deposited, gate spacers are formed over the liner oxide, exposing surfaces of the liner oxide. The created structure is nitrided by a plasma stream containing N/H, reducing the etch rate of the exposed liner oxide. The liner oxide is then removed by applying a wet etch, contact regions to the gate electrode are salicided.