The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Mar. 05, 2001
Hideto Ohnuma, Kanagawa, JP;
Chiho Kokubo, Kanagawa, JP;
Koichiro Tanaka, Kanagawa, JP;
Naoki Makita, Nara, JP;
Shuhei Tsuchimoto, Nara, JP;
Hideto Ohnuma, Kanagawa, JP;
Chiho Kokubo, Kanagawa, JP;
Koichiro Tanaka, Kanagawa, JP;
Naoki Makita, Nara, JP;
Shuhei Tsuchimoto, Nara, JP;
Abstract
In a crystallization process of an amorphous semiconductor film, a first crystalline semiconductor film having crystalline regions, and dotted with amorphous regions within the crystalline regions, is obtained by performing heat treatment processing after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. The amorphous regions are kept within a predetermined range by regulating the heat treatment conditions at this point. Laser annealing is performed on the first crystalline semiconductor film, to form a second crystalline semiconductor film. Electrical characteristics for a TFT manufactured based on the second crystalline semiconductor film can be obtained having less dispersion.