The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Jul. 05, 2001
Applicants:
Nobuhiko Hayashi, Osaka, JP;
Takenori Goto, Ogaki, JP;
Takashi Kano, Hirakata, JP;
Yasuhiko Nomura, Moriguchi, JP;
Inventors:
Nobuhiko Hayashi, Osaka, JP;
Takenori Goto, Ogaki, JP;
Takashi Kano, Hirakata, JP;
Yasuhiko Nomura, Moriguchi, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S005/00 ; H01L033/00 ; H01L029/06 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm.