The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Oct. 03, 2002
Tatsuya Kunikiyo, Tokyo, JP;
Tatsuya Kunikiyo, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
There is provided a MRAM capable of reading at any timing information of memory cells at different addresses connected to the same bit line. Specifically, a memory cell of an address (AD) has MOS transistors (Q, Q) connected in series and a magnetic tunnel resistive element (MR), which are disposed between bit lines (BL, BL). The gate electrodes of the MOS transistors (Q, Q) are respectively connected to word lines (WL, WL). Memory lines (ML, ML) are connected in common to a reference voltage source (VR) via N-channel MOS transistors (Q, Q), and are respectively connected to current sources with a switch (S, S). The bit lines (BL, BL, BL, BL) are respectively connected to inputs of buffers with a switch (Bto B), and their outputs are supplied to the corresponding sense amplifier (SA).