The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Dec. 26, 2002
Krishna Seshan, San Jose, CA (US);
Chaoyang LI, San Jose, CA (US);
Geoffery L. Bakker, San Jose, CA (US);
Lawrence Dass, Fremont, CA (US);
Krishna Seshan, San Jose, CA (US);
Chaoyang Li, San Jose, CA (US);
Geoffery L. Bakker, San Jose, CA (US);
Lawrence Dass, Fremont, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for fabricating a microelectronic image projection device. One or more nitride dams are formed upon the substrate of the device surrounding the active pixel area. The nitride dams help to contain the liquid crystal and confine the epoxy sealant. In alternative embodiments one or more nitride pillars are formed on the substrate to support the cover glass and maintain the distance between the cover glass and the active pixel area of the substrate. The nitride dams and pillars may be formed on the substrate through an ion implantation method in which HDP nitride is implanted with, for example, silicon ions. The ion implantation causes those areas of the nitride that are implanted with ions to etch more slowly than those areas that are not implanted with ions. This etch rate differential allows formation of the nitride formations with a non-contact single mask etching process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile