The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Jan. 23, 2001
Takeo Matsuki, Tokyo, JP;
Yoshihiro Takaishi, Tokyo, JP;
Takeo Matsuki, Tokyo, JP;
Yoshihiro Takaishi, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
The present invention provides a structure for a semiconductor device, capable of eliminating the generation of defective products due to poor connection. In the present semiconductor device, an n-type high concentration diffusion layeris selectively formed on the P-type silicon substrateand on the diffusion layera silicon oxide filmis formed as a first interlayer insulating filmA silicon plugis disposed on the n-type high concentration diffusion layerOn the top end surface of the polysilicon pluga silicide padis formed in a self-aligning manner such that the width of the silicide padis larger than that of the polysilicon plugA second interlayer insulating film is formed so as to cover the first interlayer insulating filmand the silicide padand a tungsten plugis disposed on the silicide padOn the second interlayer insulating film, wiringmade of an aluminum-copper alloy and connected to the tungsten plug, is formed.