The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Dec. 29, 2003
Applicants:
Jae Young Jeong, Cueonan-kun, KR;
Takashi Fuse, Tokyo, JP;
Kiwami Fujimoto, Nirasaki, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ; H01L021/461 ;
U.S. Cl.
CPC ...
Abstract
A plasma etching method is performed by plasma etching an SiN layer through a mask layer to form a first wiring portion and a second wiring portion, the first and the second wiring portions having different wiring densities in the etched SiN layer, the mask having two pattern portions respectively corresponding to the first and the second wiring portions. In the plasma etching step, by using an etching gas including fluorocarbon and CHF, the line width variation between the first and the second wiring portions is restrained.