The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Apr. 09, 2003
Qiang Guo, Singapore, SG;
Ahila Krishnamoorthy, Singapore, SG;
Xiaomei Bu, Singapore, SG;
Vladimir N. Bliznetsov, Singapore, SG;
Qiang Guo, Singapore, SG;
Ahila Krishnamoorthy, Singapore, SG;
Xiaomei Bu, Singapore, SG;
Vladimir N. Bliznetsov, Singapore, SG;
Agency for Science, Technology and Research, Singapore, SG;
Abstract
An improved method of forming a dual damascene structure that includes an organosilicate glass (OSG) dielectric layer is described. A via first process is followed in which a via is formed in the OSG layer and preferably stops on a SiC layer. The SiC layer is removed prior to stripping a photoresist containing the via pattern. A planarizing BARC layer is formed in the via to protect the exposed substrate from damage during trench formation. The method provides higher Kelvin via and via chain yields. Damage to the OSG layer at top corners of the via and trench is avoided. Furthermore, there is no pitting in the OSG layer at the trench bottom. Vertical sidewalls are achieved in the via and trench openings and via CD is maintained. The OSG loss during etching is minimized by removing the etch stop layer at an early stage of the dual damascene sequence.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile