The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2005

Filed:

Jan. 02, 2003
Applicants:

Geunbae Lim, Suwon-city, Kyungki-do, KR;

Yukeun Eugene Pak, Seongnam-city, Kyungki-do, KR;

Jong Up Jeon, Suwon-city, Kyungki-do, KR;

Hyunjung Shin, Seongnam-city, Kyungki-do, KR;

Young Kuk, Seoul, KR;

Inventors:

Geunbae Lim, Suwon-city, Kyungki-do, KR;

Yukeun Eugene Pak, Seongnam-city, Kyungki-do, KR;

Jong Up Jeon, Suwon-city, Kyungki-do, KR;

Hyunjung Shin, Seongnam-city, Kyungki-do, KR;

Young Kuk, Seoul, KR;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/331 ;
U.S. Cl.
CPC ...
Abstract

A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM probe having a source, channel, and drain is formed by etching a single crystalline silicon substrate into a V-shaped groove and doping the etching sloping sides at one end of the V-shaped groove with impurities.


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