The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Dec. 10, 2002
Kohta Yoshikawa, Kawasaki, JP;
Kohta Yoshikawa, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of making a semiconductor device, including the steps of forming, upon a substrate, a semiconductor film, an insulating film, and a conductive film. Part of the upper surface of the conductive film is covered with a resist pattern so that the semiconductor film protrudes from the edges of the resist pattern. Then, the conductive film is etched using the resist pattern as a mask to leave a patterned conductive film, whereby side wall additives of reaction byproducts are generated. Next, the insulating film is etched using the patterned conductive film and side wall additives as a mask, and the side wall additives are removed. Then, impurities are implanted in the semiconductor film using the patterned conductive film as a mask so that impurities transmit through the insulating film, which expose on both sides of the patterned conductive film after removing the side wall additives. Finally, the resist pattern is removed.