The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Apr. 11, 2003
Jin-won Jun, Seoul, KR;
Young-wug Kim, Seoul, KR;
Tae-soo Park, Sungnam-shi, KR;
Kyung-tae Lee, Gwacheon-shi, KR;
Jin-Won Jun, Seoul, KR;
Young-Wug Kim, Seoul, KR;
Tae-Soo Park, Sungnam-shi, KR;
Kyung-Tae Lee, Gwacheon-shi, KR;
Abstract
A method of forming a dual damascene interconnection employs a low-k dielectric organic polymer as an insulating layer. With only one hard mask layer, ashing damage to the insulating layer is prevented using a hard mask layer and an etch-stop layer that are different in etch rate from that of a self-aligned spacer. Further, it is possible to form a via hole that is smaller than the resolution limit of the photolithographic process. As a result, the process is simplified and a photoresist tail phenomenon does not occur.