The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2005

Filed:

Oct. 08, 2003
Applicants:

Tricia L. Breen, Hopewell Junction, NY (US);

Lawrence A. Clevenger, LaGrangeville, NY (US);

Louis L. Hsu, Fishkill, NY (US);

Li-kong Wang, Montvale, NJ (US);

Kwong Hon Wong, Wappingers Falls, NY (US);

Inventors:

Tricia L. Breen, Hopewell Junction, NY (US);

Lawrence A. Clevenger, LaGrangeville, NY (US);

Louis L. Hsu, Fishkill, NY (US);

Li-Kong Wang, Montvale, NJ (US);

Kwong Hon Wong, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L051/40 ; H01L021/00 ;
U.S. Cl.
CPC ...
Abstract

A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.


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