The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Feb. 24, 2003
Sudhakar Balijepalli, Midland, MI (US);
Dale J. Aldrich, Lake Jackson, TX (US);
Laura A. Grier, Brazoria, TX (US);
Sudhakar Balijepalli, Midland, MI (US);
Dale J. Aldrich, Lake Jackson, TX (US);
Laura A. Grier, Brazoria, TX (US);
Dow Global Technologies, Inc., Midland, MI (US);
Abstract
Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.