The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2005

Filed:

Jul. 11, 2003
Applicants:

Kenji Kawano, Atsugi, JP;

Hiroaki Yoshidaya, Atsugi, JP;

Jun Hiraoka, Atsugi, JP;

Yuichi Sasaki, Nagasaki, JP;

Eiji Kawazura, Atsugi, JP;

Satoshi Matsumoto, Atsugi, JP;

Inventors:

Kenji Kawano, Atsugi, JP;

Hiroaki Yoshidaya, Atsugi, JP;

Jun Hiraoka, Atsugi, JP;

Yuichi Sasaki, Nagasaki, JP;

Eiji Kawazura, Atsugi, JP;

Satoshi Matsumoto, Atsugi, JP;

Assignee:

Anritsu Corporation, Atsugi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L031/0232 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.


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