The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Mar. 13, 2002
Koji Nii, Tokyo, JP;
Shoji Okuda, Hyogo, JP;
Koji Nii, Tokyo, JP;
Shoji Okuda, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In the semiconductor storage device, a dummy P+ diffusion region which does not contribute to a storage operation is formed in the vicinity of two P+ diffusion regions constituting a storage node. Moreover, a dummy N+ diffusion region which does not contribute to the storage operation is formed in the vicinity of N+ diffusion regions FLand FLconstituting a storage node. Consequently, a part of electrons generated in a P well region PW by irradiation of α rays or neutron rays can be collected into the dummy N+ diffusion region FL, and a part of holes generated in an N well region NW by the irradiation of the α rays or the neutron rays can be collected into the dummy P+ diffusion region FL