The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Oct. 08, 2002
Applicants:
Sameer P. Pendharkar, Richardson, TX (US);
Taylor R. Efland, Richardson, TX (US);
William Nehrer, Soquel, CA (US);
Inventors:
Sameer P. Pendharkar, Richardson, TX (US);
Taylor R. Efland, Richardson, TX (US);
William Nehrer, Soquel, CA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A transistor is formed in a semiconductor substrate. A deep n-well region is used in conjunction with a shallow n-well region. A lightly doped drain extension region is disposed between a drain region and a gate conductor. The use of the regions and against the backdrop of region provides for a very high breakdown voltage as compared to a relatively low channel resistance for the device.