The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Apr. 18, 2003
Shuji Koyama, Kanagawa, JP;
Toshio Kashino, Kanagawa, JP;
Hiroaki Mihara, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Patterning is performed to thermal oxide filmsandformed on both surface sides of a silicon substrate in which crystal orientation of a surface is () or (), a liquid chamber pattern and a liquid supplying port pattern are formed, and a liquid chamber and a liquid supplying port are formed separately by anisotropically etching the silicon substrate from both surface sides at the same time. Then, a silicon nitride film is deposited with a low pressure chemical vapor deposition to both surface sides of the silicon substrate and all faces of the liquid chamber and the liquid supplying port which are formed by etching. As a result, when the silicon substrate is used for a top plate, stiffness of the top plate is improved, design freedom of the liquid chamber and the liquid supplying port is increased, misalignment is prevented in bonding to the substrate, degradation of ejecting performance is prevented, and a liquid discharge head having high preciseness and high reliability can be provided.