The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Jun. 26, 2001
Applicants:
Chong-yao Chen, Chang-Hua, TW;
Chen-bin Lin, Taipei, TW;
Feng-ming Liu, Feng Shan, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L031/062 ; H01L031/113 ;
U.S. Cl.
CPC ...
Abstract
A structure of a CMOS image sensory device is described. A photodiode sensory region and a transistor device region are isolated from each other by an isolation layer formed in the substrate. A gate structure is located on the transistor device region, and a source/drain region is in the transistor device region beside the side of the gate structure. A doped region is in the photodiode sensory region. A self-aligned block is located on the photodiode sensory region and a protective layer is formed on the entire substrate.