The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Jul. 24, 2001
Applicants:
Hikaru Nishitani, Nara, JP;
Makoto Yamamoto, Takarazuka, JP;
Yoshinao Taketomi, San Diego, CA (US);
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L027/108 ; H01L029/04 ; H01L031/036 ;
U.S. Cl.
CPC ...
Abstract
This invention concerns with a semiconductor device which is characterized in that the device is provided with a thin film transistorhaving a polycrystalline semiconductor layer, the semiconductor layerincluding a channel area, highly doped drain areaspositioned on both sides of the channel areaand LDD areaspositioned between the channel areaand the highly doped drain areasand lower in dopant density than the highly doped drain areas, wherein any diameter of the crystalat least partly existing in the LDD areais larger than the size of other crystals