The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Apr. 19, 2002
Hidenori Sato, Ome, JP;
Katsuhiko Ichinose, Tokorozawa, JP;
Yukino Ishii, Hamura, JP;
Tomoko Jinbo, Akishima, JP;
Hidenori Sato, Ome, JP;
Katsuhiko Ichinose, Tokorozawa, JP;
Yukino Ishii, Hamura, JP;
Tomoko Jinbo, Akishima, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A CVD device () used for depositing a silicon nitride has a structure in which a hot wall furnace () for thermally degrading a source gas and a chamber () for forming a film over a surface of a wafer () are separated from each other. The hot wall furnace () for thermally degrading the source gas is provided above the chamber (), and a heater () capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200° C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace () through pipes () and (), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage () of the chamber () to form a film on the surface of the wafer ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile